Part of PH-03 — Semiconductors & Electronic Devices

PH-03 Formula Reference — Complete Mathematical Toolkit for NEET

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Energy and Band Gap

Eg=hν=hcλE_g = h\nu = \frac{hc}{\lambda}

λ=hcEg1.24 eV⋅μmEg [eV]\lambda = \frac{hc}{E_g} \approx \frac{1.24 \text{ eV·μm}}{E_g \text{ [eV]}}

Mass Action Law

ne×nh=ni2n_e \times n_h = n_i^2

nh=ni2neandne=ni2nh\therefore n_h = \frac{n_i^2}{n_e} \quad \text{and} \quad n_e = \frac{n_i^2}{n_h}

Rectifier Output Frequency

foutHWR=finf_{out}^{\text{HWR}} = f_{in}

foutFWR=2×finf_{out}^{\text{FWR}} = 2 \times f_{in}

ToutFWR=12finT_{out}^{\text{FWR}} = \frac{1}{2f_{in}}

Logic Gate Boolean Expressions

OR: Y=A+BAND: Y=ABNOT: Y=A\text{OR:}\ Y = A + B \qquad \text{AND:}\ Y = A \cdot B \qquad \text{NOT:}\ Y = \overline{A}

NAND: Y=ABNOR: Y=A+B\text{NAND:}\ Y = \overline{A \cdot B} \qquad \text{NOR:}\ Y = \overline{A + B}

De Morgan's Theorems

A+B=AB\overline{A + B} = \overline{A} \cdot \overline{B}

AB=A+B\overline{A \cdot B} = \overline{A} + \overline{B}

LED Wavelength Shortcut (NEET Numerical)

λ (μm)=1.24Eg (eV)\lambda\ (\mu m) = \frac{1.24}{E_g\ (eV)}

Carrier Concentration Numerical Template

Given: ni, nenh=ni2ne\text{Given: } n_i,\ n_e \quad \Rightarrow \quad n_h = \frac{n_i^2}{n_e}

Barrier Potential Values

Vbarrier(Si)0.7 VVbarrier(Ge)0.3 VV_{barrier}(\text{Si}) \approx 0.7\ V \qquad V_{barrier}(\text{Ge}) \approx 0.3\ V

Band Gap Reference Values

Eg(Si)=1.1 eVEg(Ge)=0.67 eVEg(Diamond)=5.4 eVE_g(\text{Si}) = 1.1\ \text{eV} \quad E_g(\text{Ge}) = 0.67\ \text{eV} \quad E_g(\text{Diamond}) = 5.4\ \text{eV}

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