Part of JPH-04 — Semiconductors: Diodes, LEDs & Logic Gates

Optoelectronic Devices

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LED: forward-biased junction where recombination energy is emitted as light (not heat). Photon energy ≈ band gap: lambda = hcEg\frac{hc}{E_g} = 1240/EgE_g(eV) nm. Material determines color: GaAs (IR, 1.4 eV), GaAsP (red-yellow, 1.8-2.0 eV), GaN (blue, 2.7 eV; UV, 3.4 eV). LEDs operate at 1.5-3 V forward bias, are more efficient than incandescent bulbs, and have lifetimes of 50,000+ hours. Photodiode: reverse-biased junction. Photons create electron-hole pairs in the depletion region; the built-in field sweeps them, adding to reverse current. Photocurrent is linearly proportional to light intensity. Response time ~ns (very fast). Used in optical communication, light meters, barcode scanners. Solar cell: large-area unbiased junction (photovoltaic mode). Light generates voltage (~0.5-0.6 V per Si cell) and current. Cells connected in series increase voltage; in parallel increase current. Fill factor = VmpImp(VocIsc)\frac{V_mp*I_mp}{(V_oc*I_sc)} measures output quality. Si solar cell efficiency: 15-25%.

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