Key Circuit Diagram 1: Complete Circuit with EMF
ε, r r R (ext) V_terminal = ε − Ir | I = ε/(R+r) → I (clockwise)Key Circuit Diagram 2: Series vs Parallel Comparison
SERIES $R_{1}$ $R_{2}$ $R_{3}$ R_eq = $R_{1}$+$R_{2}$+$R_{3}$ Same I, V dividesPARALLEL 1/R_eq = 1/+1/+1/ Same V, I divides
Key Comparison Table Series: R grows | Parallel: R shrinks | P_parallel = × P_series OPPOSITE rules to capacitors!
Null Method Summary Table
| Method | Formula | What It Measures | Advantage |
|---|---|---|---|
| Wheatstone Bridge | P/Q = R/S | Unknown resistance | High precision, null method |
| Metre Bridge | R/S = l/(100−l) | Unknown resistance | Simple, uniform wire |
| Potentiometer (EMF) | ε_{1}/ε_{2} = l_{1}/l_{2} | Ratio of EMFs | No current from source |
| Potentiometer (r) | r = R(l_{1}−l_{2})/l_{2} | Internal resistance | True EMF measured first |
Temperature Coefficient at a Glance
| Material | α | Behavior |
|---|---|---|
| Metals (Cu, Al, Fe) | Positive (+) | R increases with T |
| Semiconductors (Si, Ge) | Negative (−) | R decreases with T |
| Alloys (Manganin, Nichrome) | ~Zero | R nearly constant |