n-type vs p-type vs Intrinsic — Comparison Note — Notes | NoteTube

Feature	Intrinsic	n-type	p-type
Composition	Pure Si or Ge	Si/Ge + pentavalent dopant	Si/Ge + trivalent dopant
Dopant examples	None	P, As, Sb (group 15)	B, Al, Ga, In (group 13)
Dopant valence	—	5 valence electrons	3 valence electrons
Majority carriers	Equal ( $e^{-}$ = $h^{+}$ )	Electrons	Holes
Minority carriers	Equal ( $e^{-}$ = $h^{+}$ )	Holes	Electrons
Carrier relation	n_e = n_h = n_i	n_e >> n_h	n_h >> n_e
Fermi level	Middle of gap	Shifts toward conduction band	Shifts toward valence band
Donor/Acceptor level	None	Donor level (just below CB)	Acceptor level (just above VB)
Net charge	Neutral	Neutral (dopant adds proton too)	Neutral (dopant removes proton)
Conductivity vs T	Increases with T	Increases with T	Increases with T
Mass action law	n_e × n_h = n_ $i^{2}$	n_e × n_h = n_ $i^{2}$	n_e × n_h = n_ $i^{2}$
Typical conductivity	Low (room temp)	Higher than intrinsic	Higher than intrinsic

Key insight for NEET: All three types are electrically neutral. The mass action law applies universally. Doping increases one carrier type while proportionally DECREASING the other (inverse relationship via n_ $i^{2}$ ).