Part of PH-03 — Semiconductors & Electronic Devices

Formula Sheet — All Formulas with Dimensional Analysis

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Energy Band Relationships

Eg=hν=hcλE_g = h\nu = \frac{hc}{\lambda}

  • EgE_g = band gap energy [J or eV]
  • hh = Planck's constant = 6.626×10346.626 \times 10^{-34} J·s
  • ν\nu = photon frequency [Hz = s1s^{-1}]
  • cc = speed of light = 3×1083 \times 10^{8} m/s
  • λ\lambda = wavelength [m]

Dimensional check: [hν]=J⋅s×s1=J[h\nu] = \text{J·s} \times \text{s}^{-1} = \text{J}

Mass Action Law

ne×nh=ni2n_e \times n_h = n_i^2

  • nen_e = electron concentration [m3m^{-3}]
  • nhn_h = hole concentration [m3m^{-3}]
  • nin_i = intrinsic carrier concentration [m3m^{-3}]

Dimensional check: [ne×nh]=m3×m3=m6[n_e \times n_h] = \text{m}^{-3} \times \text{m}^{-3} = \text{m}^{-6} = [ni2][n_i^2]

Rearranged: nh=ni2nen_h = \frac{n_i^2}{n_e} or ne=ni2nhn_e = \frac{n_i^2}{n_h}

LED Wavelength (Band Gap to Color)

λ=hcEg=1.24 eV⋅μmEg (eV)\lambda = \frac{hc}{E_g} = \frac{1.24 \text{ eV·μm}}{E_g \text{ (eV)}}

Numerical shortcut: λ(μm)=1.24Eg(eV)\lambda (\mu m) = \frac{1.24}{E_g (eV)}

Rectifier Output Frequency

foutHWR=finf_{out}^{HWR} = f_{in}

foutFWR=2×finf_{out}^{FWR} = 2 \times f_{in}

Logic Gate Boolean Expressions

GateBoolean ExpressionDe Morgan Equivalent
ORY=A+BY = A + BY=(AB)Y = (A' \cdot B')'
ANDY=ABY = A \cdot BY=(A+B)Y = (A' + B')'
NOTY=AY = \overline{A}
NANDY=ABY = \overline{A \cdot B}Y=A+BY = A' + B'
NORY=A+BY = \overline{A + B}Y=ABY = A' \cdot B'

De Morgan's Theorems

A+B=AB\overline{A + B} = \overline{A} \cdot \overline{B}

AB=A+B\overline{A \cdot B} = \overline{A} + \overline{B}

Barrier Potential Values (NEET Data)

MaterialBarrier Potential (V)Knee Voltage (V)
Silicon (Si)~0.7 V~0.7 V
Germanium (Ge)~0.3 V~0.3 V

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